Critical Dimension Scatterometry as a Scalable Solution for Hybrid Bonding Pad Recess Metrology-Reference-Cited by-同舟云学术

Critical Dimension Scatterometry as a Scalable Solution for Hybrid Bonding Pad Recess Metrology

Published:2023-05 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE 73rd Electronic Components and Technology Conference (ECTC)
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Author:

Niazi Haris Khan¹,Zhang Botao¹,Brun Xavier F.¹,Krishnan Shankar²,Chuang James²

Affiliation:

1. Intel Corporation,Chandler,United States

2. KLA Corporation,Milpitas,United States

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195650.pdf?arnumber=10195650

Reference8 articles.

1. Scatterometry—fast and robust measurements of nano-textured surfaces

2. Metrology for the next generation of semiconductor devices

3. In-line atomic resolution local nanotopography variation metrology for CMP process;kim;ICPT 2017 International Conference on Planarization/CMP Technology ICIP,0

4. Scaling package interconnects below 20µm pitch with hybrid bonding;gao;2018 IEEE 68th Electronic Components and Technology Conference (ECTC),0

5. Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors

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