Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors-Reference-Cited by-同舟云学术

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Metrology solutions using optical scatterometry for advanced CMOS: III-V and Germanium multi-gate field-effect transistors

Published:2013-05-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Chin Hock-Chun,Liu Bin,Zhang Xingui,Ling Moh-Lung,Yip Chan-Hoe,Liu Yongdong,Hu Jiangtao,Yeo Yee-Chia

Publisher

SPIE

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Critical Dimension Scatterometry as a Scalable Solution for Hybrid Bonding Pad Recess Metrology;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC);2023-05

2. Simulations of the transmission small angle x-ray scattering for three-dimensional architectures;Tenth International Symposium on Precision Mechanical Measurements;2021-11-19

3. Evaluation of the effect of data quality on the profile uncertainty of critical dimension small angle x-ray scattering;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-01-06

4. Determining the shape and periodicity of nanostructures using small-angle X-ray scattering;Journal of Applied Crystallography;2015-08-08

5. Real-time inspection system utilizing scatterometry pupil data;Journal of Micro/Nanolithography, MEMS, and MOEMS;2014-09-19

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