Next Generation Infrared (IR) Laser Debonding / Silicon Handle Technology for Precision Chiplet Technology Applications
Author:
Affiliation:
1. IBM Research,Albany,NY,USA,12203
2. Tokyo Electron,Tokyo,Japan,107-6325
Funder
IBM
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10195193/10195244/10195447.pdf?arnumber=10195447
Reference8 articles.
1. Voids-free Die-level Cu/ILD Hybrid bonding;sakuma;2023 IEEE 73rd Electronic Components and Technology Conference (ECTC),0
2. Ultrathin glass wafer lamination and laser debonding to enable glass interposer fabrication
3. Advanced wafer bonding and laser debonding
4. Factors in the selection of temporary wafer handlers for 3D/2.5D integration
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. IR Laser Debond From Silicon Carrier Wafers With Inorganic Thin Film Release Layers for High-Density 2.5D and 3D Integration;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
2. IR Laser Release for 3D Stacked Devices: Effect of the Release Stack Structure on the Debonding Mechanism;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28
3. システムインテグレーション実装技術の現状と展望(3Dチップレット集積のトレンドとこれから);Journal of The Japan Institute of Electronics Packaging;2024-01-01
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