IR Laser Release for 3D Stacked Devices: Effect of the Release Stack Structure on the Debonding Mechanism-Reference-Cited by-同舟云学术

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IR Laser Release for 3D Stacked Devices: Effect of the Release Stack Structure on the Debonding Mechanism

Published:2024-05-28 Issue: Volume: Page:343-347
ISSN:
Container-title:2024 IEEE 74th Electronic Components and Technology Conference (ECTC)
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Author:

Chancerel François¹,Urban Peter²,Slabbekoorn John¹,Halas Simon²,Bravin Julian²,Brems Steven¹,Uhrmann Thomas²,Wimplinger Markus²,Phommahaxay Alain¹,Beyne Eric¹

Affiliation:

1. Imec,Leuven,Belgium

2. EV Group,Austria

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10564841/10564831/10564911.pdf?arnumber=10564911

Reference10 articles.

1. Future Logic Scaling: Towards Atomic Channels and Deconstructed Chips

2. Low temperature backside damascene processing on temporary carrier wafer targeting 7μm and 5μm pitch microbumps for N equal and greater than 2 die to wafer TCB stacking

3. Temporary Bonding and Debonding in Advanced Packaging: Recent Progress and Applications

4. Scaling Package Interconnects Below 20µm Pitch with Hybrid Bonding

5. Development of compression molding process for Fan-Out wafer level packaging

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Novel Inorganic IR Release Process for High Temperature W2W and D2W Integration;2024 IEEE 74th Electronic Components and Technology Conference (ECTC);2024-05-28

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