Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits-Reference-Cited by-同舟云学术

Investigation of the Off-State Degradation in Advanced FinFET Technology—Part II: Compact Aging Model and Impact on Circuits

Published:2023-03 Issue:3 Volume:70 Page:921-927
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Sun Zixuan¹^ORCID,Wang Zirui¹,Wang Runsheng¹^ORCID,Zhang Lining²^ORCID,Zhang Jiayang¹^ORCID,Zhang Zuodong¹^ORCID,Song Jiahao¹,Wang Da³^ORCID,Ji Zhigang³^ORCID,Huang Ru¹

Affiliation:

1. School of Integrated Circuits, Peking University, Beijing, China

2. School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, China

3. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiaotong University, Shanghai, China

Funder

NSFC

111 Project

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10053598/10035931.pdf?arnumber=10035931

Reference38 articles.

1. A BSIM-Based Predictive Hot-Carrier Aging Compact Model

2. Device to Circuit Framework for Activity-Dependent NBTI Aging in Digital Circuits

3. A Compact Physics Analytical Model for Hot-Carrier Degradation

4. HCI vs. BTI? - Neither one's out

5. A geometrical unification of the theories of NBTI and HCI time-exponents and its implications for ultra-scaled planar and surround-gate MOSFETs

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1. The Understanding and Compact Modeling of Reliability in Modern Metal–Oxide–Semiconductor Field-Effect Transistors: From Single-Mode to Mixed-Mode Mechanisms;Micromachines;2024-01-12

2. A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology;IEEE Transactions on Electron Devices;2024-01

3. Degradation Measurement and Modelling under Ageing in a 16 nm FinFET FPGA;Micromachines;2023-12-22