A 97–107 GHz Triple-Stacked-FET Power Amplifier with 23.7dB Peak Gain, 15.1dBm PSAT, and 18.6% PAEMAX in 28-nm FD-SOI CMOS
Author:
Affiliation:
1. Pohang University of Science and Technology,Department of Electrical Engineering,Republic of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9862947/9862948/09863175.pdf?arnumber=9863175
Reference13 articles.
1. A 109 GHz CMOS Power Amplifier With 15.2 dBm Psat and 20.3 dB Gain in 65-nm CMOS Technology
2. 77–110 GHz 65-nm CMOS Power Amplifier Design
3. 94-GHz CMOS Power Amplifiers Using Miniature Dual Y-Shaped Combiner With RL Load
4. A D-band CMOS power amplifier for wireless chip-to-chip communications with 22.3 dB gain and 12.2 dBm P1dB in 65-nm CMOS technology
5. Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers
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2. Design of a W-band High-PAE Class A & AB Power Amplifier in 150 nm GaAs Technology;Transactions on Electrical and Electronic Materials;2024-02-10
3. A 11.9-dBm Psat 16.7% PAE 23-dB Gain 94-GHz Power Amplifier in 40-nm CMOS;2023 IEEE 11th Asia-Pacific Conference on Antennas and Propagation (APCAP);2023-11-22
4. Analysis and Design of Multi-Stacked FET Power Amplifier With Phase-Compensation Inductors in Millimeter-Wave Band;IEEE Transactions on Microwave Theory and Techniques;2023-05
5. A Compact 210-to-250 GHz Quad-Stacked Power Amplifier in 0.13-μm SiGe BiCMOS;2022 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP);2022-11-27
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