Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers-Reference-Cited by-同舟云学术

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Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers

Published:2013-04 Issue:4 Volume:61 Page:1543-1556
ISSN:0018-9480
Container-title:IEEE Transactions on Microwave Theory and Techniques
language:
Short-container-title:IEEE Trans. Microwave Theory Techn.

Author:

Dabag Hayg-Taniel,Hanafi Bassel,Golcuk Fatih,Agah Amir,Buckwalter James F.,Asbeck Peter M.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

Link

http://xplorestaging.ieee.org/ielx7/22/6492112/06475208.pdf?arnumber=6475208

Cited by 176 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Gain and Power Enhancement With Coupled Technique for a Distributed Power Amplifier in 0.25- μm GaN HEMT Technology;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2024-08

2. Systematic Design Methodology for CMOS Millimeter-Wave Power Amplifiers With an E-Band Fully Differential Implementation in 16-nm FinFET;IEEE Transactions on Microwave Theory and Techniques;2024-08

3. A Ka-band 27.6-dBm power amplifier with a compression-state large-signal matching approach in 130-nm CMOS SOI technology;Microelectronics Journal;2024-07

4. Phased-Array-Compatible Area-Efficient D-Band Power Amplifiers in 45 RF SOI based on Cascade Stacking;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

5. Analysis and design of broadband 2‐W power amplifier based on cascode transistors;Microwave and Optical Technology Letters;2024-05

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