A 109 GHz CMOS Power Amplifier With 15.2 dBm Psat and 20.3 dB Gain in 65-nm CMOS Technology-Reference-Cited by-同舟云学术

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A 109 GHz CMOS Power Amplifier With 15.2 dBm Psat and 20.3 dB Gain in 65-nm CMOS Technology

Published:2016-07 Issue:7 Volume:26 Page:510-512
ISSN:1531-1309
Container-title:IEEE Microwave and Wireless Components Letters
language:
Short-container-title:IEEE Microw. Wireless Compon. Lett.

Author:

Son Hyuk Su,Jang Joo Young,Kang Dong Min,Lee Hae Jin,Park Chul Soon

Funder

Institute for Information & communications Technology Promotion (IITP)

Korea government (MSIP)

National Research Foundation of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics

Link

http://xplorestaging.ieee.org/ielx7/7260/7503536/07492298.pdf?arnumber=7492298

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 194-GHz Three-Stage Differential Driver Amplifier Utilizing a Three-Element Embedded Core at Near-fmax Frequencies in 65-Nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-06

2. A W-Band Power Amplifier With 19.6% PAE in 45-nm SOI CMOS;2024 IEEE 7th Advanced Information Technology, Electronic and Automation Control Conference (IAEAC);2024-03-15

3. Design of a W-band High-PAE Class A & AB Power Amplifier in 150 nm GaAs Technology;Transactions on Electrical and Electronic Materials;2024-02-10

4. A D-Band Variable Gain Low Noise Amplifier in a 28-nm CMOS Process for 6G Wireless Communications;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-01

5. A 33.6-dB Gain V-Band Driving Amplifier Using Half-Shielded Transformer;IEEE Microwave and Wireless Technology Letters;2024-01

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