A D-band CMOS power amplifier for wireless chip-to-chip communications with 22.3 dB gain and 12.2 dBm P1dB in 65-nm CMOS technology-Reference-Cited by-同舟云学术

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A D-band CMOS power amplifier for wireless chip-to-chip communications with 22.3 dB gain and 12.2 dBm P1dB in 65-nm CMOS technology

Published:2018-01 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
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Author:

Son H. S.,Lee C. J.,Kang D. M.,Jang T. H.,Lee H. S.,Kim S. H.,Byeon C. W.,Park C. S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8305322/8310000/08310061.pdf?arnumber=8310061

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A D-Band Differential Amplifier With Cross-Couple of Series-Connected Capacitor and Transmission Line-Based Dual-Frequency G _max-Core;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-06

2. A D-Band Power Amplifier With 60-GHz Large-Signal Bandwidth and 7.6% Peak PAE in 28-nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-05

3. Analysis and Design of Multi-Stacked FET Power Amplifier With Phase-Compensation Inductors in Millimeter-Wave Band;IEEE Transactions on Microwave Theory and Techniques;2023-05

4. A 130-GHz Low-Area Power Amplifier in 40-nm CMOS;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-04

5. A 130-GHz Low-Area Power Amplifier in 40-nm CMOS;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-04

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