Analysis and Design of Multi-Stacked FET Power Amplifier With Phase-Compensation Inductors in Millimeter-Wave Band

Author:

Kim Kyunghwan1ORCID,Choi Inho1ORCID,Lee Kangseop1ORCID,Choi Seung-Uk1,Kim Jiseul1ORCID,Choi Chan-Gyu1,Song Ho-Jin1ORCID

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea

Funder

Samsung Electronics Corporation Ltd.

Institute of Information and Communications Technology Planning and Evaluation (IITP) Grant funded through the Korean Government

“Investigation on Future mm-Wave Circuits, Packages, and System”

“Development of 300-GHz Band Tbps Beamforming Transceiver Chip for Next-Generation Short-Range Communication”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Radiation

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