A 5G FR2 n260/n259 Phased-Array Transmitter Front-End IC in 28-nm CMOS FD-SOI with 3-Stack Power Amplifier Employing OPA-Based Bias Scheme and Cross-Tied Inductor Topology-Reference-Cited by-同舟云学术

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A 5G FR2 n260/n259 Phased-Array Transmitter Front-End IC in 28-nm CMOS FD-SOI with 3-Stack Power Amplifier Employing OPA-Based Bias Scheme and Cross-Tied Inductor Topology

Published:2024-06-16 Issue: Volume:32 Page:267-270
ISSN:
Container-title:2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)
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Author:

Yun Jongwon¹,Lim Hongkie¹,Jeong Jaeyeon¹,Lee Iljin¹,Kim Doyoon¹,Kim Kyunghwan¹,Choi Han-Woong¹,Park Geonho¹,Baek Goeun¹,Sung Eun-Taek¹,Jain Ajaypat²,Malekzadeh Foad A.²,Bhagavatula Venumadhav²,Lu Ivan S.-C.²,Son Sangwon²,Park Hyun-Chul¹,Hur Joonhoi¹,Yoo Sangmin¹

Affiliation:

1. Samsung Electronics,S.LSI,S. Korea

2. Samsung Electronics,S.LSI,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10599936/10599927/10600008.pdf?arnumber=10600008

Reference13 articles.

1. What will 5G be?;Andrews;IEEE JSAC,2014

2. A 39-GHz 64-Element Phased-Array Transceiver With Built-In Phase and Amplitude Calibrations for Large-Array 5G NR in 65-nm CMOS

3. 4.1 A 39GHz-Band CMOS 16-Channel Phased-Array Transceiver IC with a Companion Dual-Stream IF Transceiver IC for 5G NR Base-Station Applications

4. A 16-Channel, 28/39GHz Dual-Polarized 5G FR2 Phased-Array Transceiver IC with a Quad-Stream IF Transceiver Supporting Non-Contiguous Carrier Aggregation up to 1.6GHz BW

5. A 28/37 frequency reconfigurable dual-band beamforming front-end IC for 5G NR;Lee;IEEE RFIC,2023

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