A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI-Reference-Cited by-同舟云学术

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A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI

Published:2024 Issue: Volume:7 Page:147-150
ISSN:2573-9603
Container-title:IEEE Solid-State Circuits Letters
language:
Short-container-title:IEEE Solid-State Circuits Lett.

Author:

Zhang Jian¹^ORCID,Wang Dawei¹,Zhu Wei²,Zhai Ming¹,Yi Xiangjie¹,Wang Yan¹^ORCID

Affiliation:

1. School of Integrated Circuits, Tsinghua University, Beijing, China

2. School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing, China

Funder

IEEE A-SSCC 2023

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/8011414/10359146/10495312.pdf?arnumber=10495312

Reference14 articles.

1. 14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays

2. A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI

3. A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications

4. Multi-port Active Load Pulling for mm-Wave 5G Power Amplifiers: Bandwidth, Back-Off Efficiency, and VSWR Tolerance

5. A 26-42 GHz Broadband, Back-off Efficient and Vswr Tolerant CMOS Power Amplifier Architecture for 5G Applications

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