A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI-Reference-Cited by-同舟云学术

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A 28GHz Two-Way Current Combining Stacked-FET Power Amplifier in 22nm FD-SOI

Published:2020-03 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE Custom Integrated Circuits Conference (CICC)
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Author:

Zong Zhiwei,Tang Xinyan,Nguyen Johan,Khalaf Khaled,Mangraviti Giovanni,Liu Yao,Wambacq Piet

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9060424/9075871/09075906.pdf?arnumber=9075906

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Ka-Band Mutual Coupling Resilient Stacked-FET Power Amplifier With 21.2 dBm OP1dB and 27.6% PAE1dB in 45-nm CMOS SOI;IEEE Solid-State Circuits Letters;2024

2. Circuits for 5G applications implemented in FD-SOI and RF/PD-SOI technologies;New Materials and Devices Enabling 5G Applications and Beyond;2024

3. A 16-32GHz RF Silicon Photonic Receiver with 22nm FD-SOI CMOS Driver;2023 IEEE Photonics Conference (IPC);2023-11-12

4. A Ka-Band Mutual Coupling Resilient Balanced PA with Magnetic Coupling Self-Cancelling Inductor Achieving 21.2dBm OP_1dBand 27.6% PAE_1dB;2023 IEEE Asian Solid-State Circuits Conference (A-SSCC);2023-11-05

5. Ka-band time-domain multiplexing front-end with minimum switch area utilization on 22 nm fully depleted silicon-on-insulator CMOS technology;International Journal of Microwave and Wireless Technologies;2021-03-31

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