Ka-Band CMOS Stacked-FET Power Amplifier With Pre-Distorted Driver Stage for 5G Applications
Author:
Affiliation:
1. Department of Electronic Engineering, College of Information Technology, Soongsil University, Seoul, Republic of Korea
2. Department of Intelligent Semiconductors, College of Information Technology, Soongsil University, Seoul, Republic of Korea
Funder
National Research Foundation of Korea (NRF) through the Korean Government [Ministry of Science and ICT (MSIT)]
Korea Institute for Advancement of Technology (KIAT) through the Korean Government [Ministry of Trade, Industry and Energy (MOTIE)]
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/6287639/10380310/10623185.pdf?arnumber=10623185
Reference25 articles.
1. A Wideband CMOS Power Amplifier With 52% Peak PAE Employing Resistive Shunt Feedback for Sub-6 GHz 5G Applications
2. A K-Band Broadband Power Amplifier With 15.7 dBm Power and 30.4% PAE in 0.13 μm CMOS
3. Analysis and Design of Multi-Stacked FET Power Amplifier With Phase-Compensation Inductors in Millimeter-Wave Band
4. A 28-GHz 26.8-dBm Doherty Power Amplifier With Four-Way Differential Hybrid Load- Modulated Combiner in 55-nm CMOS
5. A Compact W-Band Power Amplifier With a Peak PAE of 21.1% in 65-nm CMOS Technology
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