A K-Band Broadband Power Amplifier With 15.7 dBm Power and 30.4% PAE in 0.13 <i>μ</i>m CMOS-Reference-Cited by-同舟云学术

A K-Band Broadband Power Amplifier With 15.7 dBm Power and 30.4% PAE in 0.13 μm CMOS

Published:2023-04 Issue:4 Volume:70 Page:1321-1325
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Li Jinwei¹^ORCID,Sun Bing¹,Huang Jiawei¹^ORCID,Wu Lei¹,Chang Hudong¹,Jia Rui¹,Liu Honggang²

Affiliation:

1. Key Laboratory of Microelectronic Devices and Integrated Technology, High-Frequency High-Voltage Devices and Integrated Circuits R&D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, China

2. Research Center for Carbon-Based Electronics, School of Electronics, Peking University, Beijing, China

Funder

Research and Development Projects in Key Fields of Guangdong Province

Opening Project of Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/10083009/09984991.pdf?arnumber=9984991

Reference11 articles.

1. A Broadband Transformer-Based Power Amplifier Achieving 24.5-dBm Output Power Over 24–41 GHz in 65-nm CMOS Process

2. A Ka-Band Transformer-Based Doherty Power Amplifier for Multi-Gb/s Application in 90-nm CMOS

3. A Full Ka-Band Power Amplifier With 32.9% PAE and 15.3-dBm Power in 65-nm CMOS

4. A 90-nm CMOS Broadband and Miniature Q-band Balanced Medium Power Amplifier

5. Design of a CMOS Tapered Cascaded Multistage Distributed Amplifier

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