A 15-Gb/s Single-Ended NRZ Receiver Using Self-Referenced Technique With 1-Tap Latched DFE for DRAM Interfaces
Author:
Affiliation:
1. Department of Semiconductor System Engineering, Korea University, Seoul, South Korea
2. Department of Electrical Engineering, Korea University, Seoul, South Korea
Funder
National Research Foundation of Korea (NRF) Grant funded by the Korea Government
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/9996096/09897068.pdf?arnumber=9897068
Reference15 articles.
1. A Duo-Binary Transceiver With Time-Based Receiver and Voltage-Mode Time-Interleaved Mixing Transmitter for DRAM Interface
2. A 9 Gb/s/ch Transceiver With Reference-Less Data-Embedded Pseudo-Differential Clock Signaling for Graphics Memory Interfaces
3. A 25 Gb/s Wireline Receiver With Feedforward and Feedback Equalizers at Analog Front-End
4. An Adaptive Offset Cancellation Scheme and Shared-Summer Adaptive DFE for 0.068 pJ/b/dB 1.62-to-10 Gb/s Low-Power Receiver in 40 nm CMOS
5. A 3.2Gbps single-ended receiver using self-reference generation technique for DRAM interface;seol;Proc IEEE Int Conf Electronics Circuits Syst (ICECS),2010
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