A Single-Ended NRZ Receiver With Gain-Enhanced Active-Inductive CTLE and Reference-Selection DFE for Memory Interfaces-Reference-Cited by-同舟云学术

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A Single-Ended NRZ Receiver With Gain-Enhanced Active-Inductive CTLE and Reference-Selection DFE for Memory Interfaces

Published:2024-04 Issue:4 Volume:59 Page:1261-1270
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Choi Jonghyuck¹^ORCID,Choi Yoonjae²^ORCID,Sim Jincheol¹^ORCID,Kwon Youngwook¹,Park Seungwoo³,Kim Seongcheol³^ORCID,Sim Changmin³^ORCID,Kim Chulwoo¹^ORCID

Affiliation:

1. Department of Electrical Engineering, Korea University, Seoul, South Korea

2. Foundry Division, Samsung Electronics, Hwaseong, South Korea

3. Department of Semiconductor System Engineering, Korea University, Seoul, South Korea

Funder

Institute of Information and Communication Technology Planning and Evaluation

Korean Government (MSIT)

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/4/10480871/10426764.pdf?arnumber=10426764

Reference15 articles.

1. Analysis of a Multiwire, Multilevel, and Symbol Correlation Combination Scheme

2. Recent Evolution in the DRAM Interface: Mile-Markers Along Memory Lane

3. A 16.8 Gbps/Channel Single-Ended Transceiver in 65 nm CMOS for SiP-Based DRAM Interface on Si-Carrier Channel

4. A 60nm 6Gb/s/pin GDDR5 Graphics DRAM with Multifaceted Clocking and ISI/SSN-Reduction Techniques

5. A 16Gb 18Gb/S/pin GDDR6 DRAM with per-bit trainable single-ended DFE and PLL-less clocking

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