Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures-Reference-Cited by-同舟云学术

Total-Ionizing-Dose Response of SiGe HBTs at Elevated Temperatures

Published:2022-05 Issue:5 Volume:69 Page:1079-1084
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Nergui Delgermaa¹^ORCID,Teng Jeffrey W.¹^ORCID,Hosseinzadeh Mozghan¹^ORCID,Mensah Yaw¹,Li Kan²^ORCID,Gorchichko Mariia²^ORCID,Ildefonso Adrian³^ORCID,Ringel Brett L.¹,Zhang En Xia²^ORCID,Fleetwood Daniel M.²^ORCID,Cressler John D.¹^ORCID

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USA

2. Electrical and Computer Engineering Department, Vanderbilt University, Nashville, TN, USA

3. United States Naval Research Laboratory, Washington, DC, USA

Funder

Department of the Army through the SCALE Program’s “Radiation-Hard Microelectronics Workforce Development Consortium”

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/9777895/09745926.pdf?arnumber=9745926

Reference30 articles.

1. An Investigation of ELDRS in Different SiGe Processes

2. Advanced SiGe BiCMOS Technology for Multi-Mrad Electronic Systems

3. Variability in Total-Ionizing-Dose Response of Fourth-Generation SiGe HBTs

4. Effects of hydrogen motion on interface trap formation and annealing

5. Modeling BJT radiation response with non-uniform energy distributions of interface traps

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2. A Study of Total Dose Radiation Effects in Ka-Band Fractional-N PLLs in 45nm SiGe BiCMOS;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16

3. The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Reliability studies on bipolar transistors under different particles radiation;Solid-State Electronics;2023-08