The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs-Reference-Cited by-同舟云学术

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The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs

Published:2024-04-14 Issue: Volume: Page:1-5
ISSN:
Container-title:2024 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Nergui D.¹,Hosseinzadeh M.¹,Mensah Y. A.¹,Lee H. P.¹,Sam D. G.¹,Li K.²,Zhang E. X.³,Fleetwood D. M.⁴,Cressler John D.¹

Affiliation:

1. School of Electrical and Computer Engineering, Georgia Institute of Technology,Atlanta,GA,USA,30332

2. HUAWEI,Shenzhen,Guangdong,China,518129

3. University of Central Florida,Department of Electrical and Computer Engineering,Orlando,FL,USA,32816

4. Vanderbilt University,Department of Electrical and Computer Engineering,Nashville,TN,USA,37235

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10529283/10529298/10529309.pdf?arnumber=10529309

Reference20 articles.

1. A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

2. Recent developments using TowerJazz SiGe BiCMOS platform for mmWave and THz applications

3. Reliability and performance scaling of very high speed SiGe HBTs

4. A New Current-Sweep Method for Assessing the Mixed-Mode Damage Spectrum of SiGe HBTs

5. Emerging SiGe HBT Reliability Issues for Mixed-Signal Circuit Applications

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