Emerging SiGe HBT Reliability Issues for Mixed-Signal Circuit Applications-Reference-Cited by-同舟云学术

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Emerging SiGe HBT Reliability Issues for Mixed-Signal Circuit Applications

Published:2004-06 Issue:2 Volume:4 Page:222-236
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:en
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Cressler J.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/29219/01318627.pdf?arnumber=1318627

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The Impact of Scaling on the Effects of Mixed-Mode Electrical Stress and Ionizing Radiation for 130-nm and 90-nm SiGe HBTs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

2. Hot Carrier Effects on High Frequency Characteristics of SiGe HBTs;International Journal of Electronics Letters;2023-10-09

3. RF Reliability of SiGe and InP HBTs: A Comparative Study;2023 IEEE/MTT-S International Microwave Symposium - IMS 2023;2023-06-11

4. Characterization, Analysis and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications;IEEE Transactions on Device and Materials Reliability;2023

5. Long-Term Large-Signal RF Reliability Characterization of SiGe HBTs Using a Passive Impedance Tuner System;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19

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