Reliability studies on bipolar transistors under different particles radiation-Reference-Cited by-同舟云学术

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Reliability studies on bipolar transistors under different particles radiation

Published:2023-08 Issue: Volume:206 Page:108671
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hegde Vinayakprasanna N.,Pradeep T.M.,Bharathi M.N.,Cressler Jhon D.,Gnana Prakash A.P.

Funder

Inter-University Accelerator Centre

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Silicon-germanium as an enabling technology for extreme environment electronics;Cressler;IEEE Trans Device Mater Reliab,2010

2. An overview of high-temperature electronic device technologies and potential applications;Dreike;IEEE Trans Components Packag Manuf Technol Part A,1994

3. Analytical model for total ionizing dose-induced excess base current in PNP BJTs;Li;Microelectron Reliab,2020

4. Characterizing and modeling current gain degradation in bipolar transistor exposed to heavy ion radiation;Liu;Mater Sci Semicond Process,2021

5. High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs;Hegde;Nucl Eng Technol,2019

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Damage analysis caused by Co ions in functionally graded materials;Defence Technology;2024-08

2. Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor;Journal of Physics D: Applied Physics;2024-06-12

3. Neutron Displacement Damage in Bipolar Junction Transistors Isolated From an Integrated Circuit;IEEE Transactions on Nuclear Science;2024-04

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