Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement-Reference-Cited by-同舟云学术

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Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement

Published:2023-04-17 Issue: Volume: Page:
ISSN:
Container-title:2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
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Author:

Ke Chao-Yang¹,Wang Wei-Cheng¹,Ker Ming-Dou¹,Yang Chih-Yi²,Chang Edward Yi²

Affiliation:

1. Institute of Electronics, National Yang Ming Chiao Tung University,Hsinchu,Taiwan

2. International College of Semiconductor Technology, National Yang Ming Chiao Tung University,Hsinchu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10133934/10133941/10134426.pdf?arnumber=10134426

Reference7 articles.

1. Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs

2. ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs

3. Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection

4. Distinct Failure Modes of AlGaN/GaN HEMTs Under ESD Conditions

5. ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Test Structures to Investigate ESD Robustness of Integrated GaN Devices;2024 IEEE 36th International Conference on Microelectronic Test Structures (ICMTS);2024-04-15

2. Power Receiving Unit for High-Power Resonant Wireless Power Transfer;Energies;2023-11-30

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