Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs-Reference-Cited by-同舟云学术

Demonstration of Field- and Power-Dependent ESD Failure in AlGaN/GaN RF HEMTs

Published:2015-09 Issue:9 Volume:62 Page:2830-2836
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rossetto Isabella,Meneghini Matteo,Barbato Marco,Rampazzo Fabiana,Marcon Denis,Meneghesso Gaudenzio,Zanoni Enrico

Funder

Office of Naval Research (ONR) Project entitled GaN HEMT Reliability Physics: from Failure Mechanisms to Testing Methods, Test Structures and Acceleration Laws

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7210242/07210260.pdf?arnumber=7210260

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