ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications-Reference-Cited by-同舟云学术

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ESD Failures of GaN-on-Si D-Mode AlGaN/GaN MIS-HEMT and HEMT Devices for 5G Telecommunications

Published:2021-09-26 Issue: Volume: Page:
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Container-title:2021 43rd Annual EOS/ESD Symposium (EOS/ESD)
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Author:

Wu Wei-Min,Chen Shih-Hung,Putcha Vamsi,Peralagu Uthayasankaran,Sibaja-Hernandez Arturo,Yadav Sachin,Parvais Bertrand,Alian AliReza,Collaert Nadine,Ker Ming-Dou,Groeseneken Guido

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9574699/9574702/09574716.pdf?arnumber=9574716

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrical and Small-Signal Characteristics Degradation of RF GaN HEMTs Under Repetitive ESD Stresses;IEEE Transactions on Electron Devices;2024-08

2. MISHEMT intrinsic voltage gain under multiple channel output characteristics;Semiconductor Science and Technology;2023-09-22

3. ON-State Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs;IEEE Electron Device Letters;2023-08

4. Investigation on ESD Robustness of 1200-V D- Mode GaN MIS-HEMTs with HBM ESD Test and TLP Measurement;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17

5. ESD HBM Discharge Model in RF GaN-on-Si (MIS)HEMTs;IEEE Transactions on Electron Devices;2022-04

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