Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection-Reference-Cited by-同舟云学术

Incorporation of a Simple ESD Circuit in a 650V E-Mode GaN HEMT for All-Terminal ESD Protection

Published:2022-03 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Lee Jian-Hsing¹,Huang Yeh-Jen¹,Hong Li-Yang¹,Chen Li-Fan¹,Jou Yeh-Ning¹,Lin Shin-Cheng¹,Wohlmuth Walter¹,Liao Chih-Cherng²,Li Ching-Ho²,Huang Shoa-Chang²,Chen Ke-Horng²

Affiliation:

1. Vanguard International Semiconductor Corp.,Technology Development Organization,HsinChu,Taiwan

2. National Yang Ming Chiao Tung University,Department of Electrical and Computer Engineering,HsinChu,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9764406/9764408/09764596.pdf?arnumber=9764596

Reference22 articles.

1. On-Chip Gate ESD Protection for AlGaN/GaN E-Mode Power HEMT Delivering >2kV HBM ESD Capability

2. Development of a New pHEMT-Based Electrostatic Discharge Protection Structure

3. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

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