Demonstration of Large Polarization in Si-doped HfO<sub>2</sub> Metal–Ferroelectric–Insulator-Semiconductor Capacitors with Good Endurance and Retention-Reference-Cited by-同舟云学术

Demonstration of Large Polarization in Si-doped HfO₂ Metal–Ferroelectric–Insulator-Semiconductor Capacitors with Good Endurance and Retention

Published:2023-04-17 Issue: Volume: Page:
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Container-title:2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT)
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Author:

Hsuen Jing-Hua¹,Lederer Maximillian²,Kerkhofs Lars³,Raffel Yannick²,Pirro Luca⁴,Chohan Talha⁴,Seidel Konrad²,Kämpfe Thomas²,De Sourav²,Wu Tian-Li¹

Affiliation:

1. Institute of Pioneer Semiconductor Innovation, National Yang Ming Chiao Tung University,Taiwan

2. Fraunhofer-Institut für Photonische Mikrosysteme IPMS - Center Nanoelectronic Technologies,Dresden,Germany

3. KU Leuven,Faculty of Engineering Science,Belgium

4. GlobalFoundries Fab 1,Dresden,Germany

Funder

Ministry of Education (MOE) in Taiwan

Publisher

IEEE

Link

Reference13 articles.

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