Demonstration of 64 Conductance States and Large Dynamic Range in Si-doped HfO2 FeFETs under Neuromorphic Computing Operations
Author:
Affiliation:
1. National Yang Ming Chiao Tung University,International College of Semiconductor Technology,Taiwan
2. imec,Leuven,Belgium
Funder
Ministry of Science and Technology
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9770952/9770961/09770994.pdf?arnumber=9770994
Reference4 articles.
1. Interplay of Switching Characteristics, Cycling Endurance and Multilevel Retention of Ferroelectric Capacitor
2. Switching Dynamics of Ferroelectric Zr-Doped HfO2
3. Technological Benchmark of Analog Synaptic Devices for Neuroinspired Architectures
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1. Multistate Capability Improvement of BEOL Compatible FeFET by Introducing an Al2O3 Interlayer;IEEE Transactions on Electron Devices;2023-11
2. Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory;Nanomaterials;2023-07-19
3. Demonstration of Large Polarization in Si-doped HfO2 Metal–Ferroelectric–Insulator-Semiconductor Capacitors with Good Endurance and Retention;2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT);2023-04-17
4. Relaxation analysis to understand positive bias induced trapping in ferroelectric FETs with Si and Gd dopants;Microelectronics Reliability;2022-11
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