Electrical Coupling Effect of Forksheet FET for Power, Performance, and Area Analysis

Author:

Lee Junjong1ORCID,Yoon Jun-Sik1ORCID,Lim Jaewan1,Baek Rock-Hyun1ORCID

Affiliation:

1. Department of Electrical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Republic of Korea

Funder

Ministry of Trade, Industry, and Energy

National Research Foundation of Korea (NRF) grant funded by the Korea government

POSTECH-Samsung Electronics Industry-Academia Cooperative Research Center

BK21 FOUR Program

IC Design Education Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. A 10 nm high performance and low-power CMOS technology featuring 3rd generation FinFET transistors, self-aligned quad patterning, contact over active gate and cobalt local interconnects;auth;IEDM Tech Dig,2017

2. Source/Drain Patterning FinFETs as Solution for Physical Area Scaling Toward 5-nm Node

3. Comparison of electrical performance of co-integrated forksheets and nanosheets transistors for the 2 nm technological node and beyond;ritzenthaler;IEDM Tech Dig,2021

4. CFET Design Options, Challenges, and Opportunities for 3D Integration

5. Performance, Power, and Area of Standard Cells in Sub 3 nm Node Using Buried Power Rail

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. BS-PDN Implemented the Latest Logic Devices for 14 Angstrom Technology Node;IEEE Transactions on Electron Devices;2024-07

2. FS2K: A Forksheet FET Technology Library and a Study of VLSI Prediction for 2nm and Beyond;2024 IEEE International Symposium on Circuits and Systems (ISCAS);2024-05-19

3. Unveiling the Role of Interface and Dielectric Wall Traps with Self-heating Induced Aging Prediction of Forksheet FET;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. Parasitic Gate Capacitance Model for N-Stack Forksheet FETs;IEEE Transactions on Electron Devices;2024-03

5. Investigation of negative differential resistance in metal-edge-contact MoS2 field effect transistor;Journal of Applied Physics;2024-02-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3