UV-Treated ZrO2 Passivation for Transparent and High-Stability In2O3 Thin Film Transistor
Author:
Affiliation:
1. College of Physics and the College of Microtechnology and Nanotechnology, Qingdao University, Qingdao, China
Funder
National Key Research and Development Program of China
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9802454/09782557.pdf?arnumber=9782557
Reference34 articles.
1. Extremely bias stress stable enhancement mode sol–gel-processed SnO2 thin-film transistors with Y2O3 passivation layers
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3. Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance
4. High-Performance Molybdenum Disulfide Field-Effect Transistors with Spin Tunnel Contacts
5. Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays
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