Facile DUV Irradiated Solution-Processed ZrO2/In2O3 for Low Voltages FET Applications
Author:
Affiliation:
1. School of Computing and Electrical Engineering (SCEE), Indian Institute of Technology Mandi, Mandi, Himachal Pradesh, India
Funder
Department of Science and Technology (DST), Government of India through “INSPIRE Ph.D. Fellowship Programme”
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/16/10538150/10528341.pdf?arnumber=10528341
Reference34 articles.
1. Wearable 1 V operating thin-film transistors with solution-processed metal-oxide semiconductor and dielectric films fabricated by deep ultra-violet photo annealing at low temperature
2. How to report and benchmark emerging field-effect transistors
3. Monolithic integration of high-voltage thin-film electronics on low-voltage integrated circuits using a solution process
4. Scaled indium oxide transistors fabricated using atomic layer deposition
5. 0.7-GHz Solution-Processed Indium Oxide Rectifying Diodes
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