Effect of selective tungsten as a polysilicon shunt on CMOS ring-oscillator performance-Reference-Cited by-同舟云学术

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Effect of selective tungsten as a polysilicon shunt on CMOS ring-oscillator performance

Published:1985-07 Issue:7 Volume:6 Page:372-374
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Metz W.A.,Szluk N.J.,Miller G.W.,Hayworth H.O.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31941/01485311.pdf?arnumber=1485311

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical and Electrical Properties of W/WN[sub x]/Poly-Si[sub 1−x]Ge[sub x] (x=0, 0.2, 0.6) Gates Stack with Post-thermal Process;Journal of The Electrochemical Society;2004

2. The Microstructure and Chemical State of W-Si-N Layers Formed in W/WN[sub x]/Poly-Si Systems during Postannealing;Journal of The Electrochemical Society;2004

3. Interfacial reactions between WNx and poly Si1−xGex films;Journal of Applied Physics;2003-12

4. In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure;Applied Physics Letters;2000-05

5. Metallization;VLSI Electronics Microstructure Science;1989

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