In situ barrier formation using rapid thermal annealing of a tungsten nitride/polycrystalline silicon structure
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126401
Reference7 articles.
1. A New Tungsten Gate Metal Oxide Semiconductor Capacitor Using a Chemical Vapor Deposition Process
2. Comparison of transformation to low-resistivity phase and agglomeration of TiSi/sub 2/ and CoSi/sub 2/
3. Formation of High Conductivity WSi x Layer and its Characterization as a Gate Electrode
4. Effect of selective tungsten as a polysilicon shunt on CMOS ring-oscillator performance
5. New method to improve thermal stability in the interface of silicon and tungsten by the interposition of plasma deposited tungsten nitride thin film
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1. Optimization of Tungsten Dual Poly-Metal Gates in Memory Devices with Ti/WN/WSiN Barrier Metal;Journal of Nanoscience and Nanotechnology;2013-09-01
2. Growth, dielectric properties, and memory device applications of ZrO2 thin films;Thin Solid Films;2013-03
3. Process engineering to reduce self-aligned contact failure by reducing process-driven thermal stress on tungsten-dual poly gate stacks in sub-60nm DRAM devices;Microelectronic Engineering;2012-11
4. Ru/WNxBilayers as Diffusion Barriers for Cu Interconnects;Japanese Journal of Applied Physics;2011-05-20
5. Ru/WNxBilayers as Diffusion Barriers for Cu Interconnects;Japanese Journal of Applied Physics;2011-05-01
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