Physical and Electrical Properties of W/WN[sub x]/Poly-Si[sub 1−x]Ge[sub x] (x=0, 0.2, 0.6) Gates Stack with Post-thermal Process-Reference-Cited by-同舟云学术

Physical and Electrical Properties of W/WN[sub x]/Poly-Si[sub 1−x]Ge[sub x] (x=0, 0.2, 0.6) Gates Stack with Post-thermal Process

Published:2004 Issue:1 Volume:151 Page:G71
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kang S.-K.,Min B. G.,Kim J. J.,Ko D.-H.,Kang H. B.,Yang C. W.,Lim K. Y.,Ahn T. H.

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference19 articles.

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4. Thermal stability of CoSi/sub 2/ film for CMOS salicide

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