Properties of W–Ge–N as a diffusion barrier material for Cu
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2042534
Reference14 articles.
1. Study of copper diffusion into Ta and TaN barrier materials for MOS devices
2. Real-time spectroscopic ellipsometry study of ultrathin diffusion barriers for integrated circuits
3. Crystallization of Reactively Sputtered Amorphous Tungsten Nitride Film
4. Physical and Electrical Properties of W/WN[sub x]/Poly-Si[sub 1−x]Ge[sub x] (x=0, 0.2, 0.6) Gates Stack with Post-thermal Process
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4. The efficiency of carbon adsorption as a diffusion barrier in Ge/Si heterostructures;Physica Scripta;2019-05-16
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