High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlO<sub>x</sub> Insulator-Reference-Cited by-同舟云学术

High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlO_x Insulator

Published:2022-05 Issue:5 Volume:43 Page:729-732
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Li Jiye¹^ORCID,Zhang Yuqing²^ORCID,Wang Jialiang¹,Yang Huan¹,Zhou Xiaoliang¹^ORCID,Chan Mansun²^ORCID,Wang Xinwei¹^ORCID,Lu Lei¹^ORCID,Zhang Shengdong¹^ORCID

Affiliation:

1. School of Electronic and Computer Engineering, Peking University, Shenzhen, China

2. Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong

Funder

Shenzhen TFT and the Advanced Display Laboratory

Shenzhen Municipal Scientific Program

International Atomic Energy Agency

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9762988/09737501.pdf?arnumber=9737501

Reference35 articles.

1. IGZO thin film transistors with Al2O3 gate insulators fabricated at different temperatures

2. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors

3. Threshold voltage dependence on channel length in amorphous-indium-gallium-zinc-oxide thin-film transistors

4. Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

5. Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

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