Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors-Reference-Cited by-同舟云学术

Study on the Lateral Carrier Diffusion and Source-Drain Series Resistance in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors

Published:2019-04-29 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Hong Sae-Young,Kim Hee-Joong,Kim Dae-Hwan,Jeong Ha-Yun,Song Sang-Hun,Cho In-Tak,Noh Jiyong,Yun Pil Sang,Lee Seok-Woo,Park Kwon-Shik,Yoon SooYoung,Kang In Byeong,Kwon Hyuck-In

Funder

National Research Foundation of Korea

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-43186-7.pdf

Reference26 articles.

1. Nomura, K. et al. Room Temperature Fabrication of Transparent Flexible Thin-film Transistors Using Amorphous Oxide Semiconductors. Nature 432, 488–492 (2004).

2. Kamiya, T. & Hosono, H. Material Characteristics and Applications of Transparent Amorphous Oxide Semiconductors. NPG Asia Mater. 2, 15–22 (2010).

3. Kwon, J.-Y., Lee, D.-J. & Kim, K.-B. Transparent Amorphous Oxide Semiconductor Thin Film Transistor. Electronic Materials Letters 7, 1–11 (2011).

4. Lee, S. Y., Kim, D. H., Chong, E., Jeon, Y. W. & Kim, D. H. Effect of Channel Thickness on Density of States in Amorphous InGaZnO Thin Film Transistor. Appl. Phys. Lett. 98, 122105 (2011).

5. Fortunato, E., Barquinha, P. & Martins, R. Oxide Semiconductor Thin-film Transistors: A Review of Recent Advances. Adv. Mater 24, 2945–2986 (2012).

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