Demonstration of SA TG Coplanar IGZO TFTs With Large Subthreshold Swing Using the Back-Gate Biasing Technique for AMOLED Applications
Author:
Affiliation:
1. Intelligent Semiconductor Engineering, Chung-Ang University, Seoul, South Korea
2. School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, South Korea
3. Research and Development Center, Samsung Display, Yongin, South Korea
Funder
Samsung Display Company Ltd
National Research Foundation of Korea
Korean Government
Chung-Ang University Graduate Research Scholarship in 2023
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx8/6245494/10416702/10612771.pdf?arnumber=10612771
Reference27 articles.
1. Strategies for Applications of Oxide-Based Thin Film Transistors
2. Development of High‐Performance IGZO Backplanes for Displays
3. Recent advances in a-IGZO thin film transistor devices: A short review;Chen;J. Korean Inst. Electr. Electron. Mater. Eng,2023
4. Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping
5. Amorphous oxide semiconductors: From fundamental properties to practical applications
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