Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs
Author:
Affiliation:
1. School of Microelectronics, Institute of Novel Semiconductors, Shandong University, Jinan, China
2. National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute, Shijiazhuang, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9965979/09930784.pdf?arnumber=9930784
Reference27 articles.
1. Electrothermal Monte Carlo Simulation of GaN HEMTs Including Electron–Electron Interactions
2. Electron mobility related to scattering caused by the strain variation of AlGaN barrier layer in strained AlGaN∕GaN heterostructures
3. Theoretical model of the polarization Coulomb field scattering in strained AlGaN/AlN/GaN heterostructure field-effect transistors
4. Effect of Polarization Coulomb Field Scattering on Parasitic Source Access Resistance and Extrinsic Transconductance in AlGaN/GaN Heterostructure FETs
5. Influence of Fin Configuration on the Characteristics of AlGaN/GaN Fin-HEMTs
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