High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure-Reference-Cited by-同舟云学术

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High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure

Published:2022-05 Issue:5 Volume:43 Page:781-784
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Hult Bjorn¹^ORCID,Thorsell Mattias¹^ORCID,Chen Jr-Tai²,Rorsman Niklas¹^ORCID

Affiliation:

1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden

2. SweGaN AB, Linköping, Sweden

Funder

Swedish Governmental Agency for Innovation Systems

Linköping University

Chalmers Tekniska Högskola

Telefonaktiebolaget LM Ericsson

Epiluvac

Swedish Defence Materiel Administration

Gotmic

Hexagem

Hitachi Energy

onsemi

Saab

SweGaN

United Monolithic Semiconductors

Swedish Foundation for Strategic Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9762988/09745541.pdf?arnumber=9745541

Reference29 articles.

1. Microwave Performance of ‘Buffer-Free’ GaN-on-SiC High Electron Mobility Transistors

2. SiC and GaN devices – wide bandgap is not all the same

3. Gallium nitride vertical power devices on foreign substrates: a review and outlook

4. Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

5. Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation

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2. A CMOS-Compatible Process for ≥3 kV GaN Power HEMTs on 6-inch Sapphire Using In Situ SiN as the Gate Dielectric;Micromachines;2024-08-02

3. Thermally stable radio frequency power and noise behaviors of AlGaN/GaN high electron mobility transistor without voltage-blocking buffer layer design;Journal of Vacuum Science & Technology B;2024-05-31

4. Excellent electrostatic control and gate reliability for breakdown enhanced AlGaN/GaN HEMTs with extreme permittivity BaTiO3;Applied Physics Letters;2024-04-08

5. Influence of post fabrication annealing on device performance of InAlN/GaN high electron mobility transistors;Journal of Physics and Chemistry of Solids;2024-04

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