Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation-Reference-Cited by-同舟云学术

Illumination effects on electrical characteristics of GaN/AlGaN/GaN heterostructures and heterostructure field effect transistors and their elimination by proper surface passivation

Published:2012-07 Issue:1 Volume:112 Page:014511
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fagerlind M.,Rorsman N.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4730782

Reference29 articles.

1. AlGaN Deep-Ultraviolet Light-Emitting Diodes

2. AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Low-Temperature-Grown Cap Layers

3. Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure

4. Persistent photoconductivity and defect levels in n-type AlGaN/GaN heterostructures

5. Photoluminescence and persistent photoconductivity of AlxGa1-xN/GaN heterostructures

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1. Sub-bandgap photon-assisted electron trapping and detrapping in AlGaN/GaN heterostructure field-effect transistors;Physica Scripta;2023-05-26

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3. High Voltage and Low Leakage GaN-on-SiC MISHEMTs on a “Buffer-Free” Heterostructure;IEEE Electron Device Letters;2022-05

4. Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation*;Chinese Physics B;2021-11-01

5. Investigation of the threshold voltage instability in normally-off p-GaN/AlGaN/GaN HEMTs by optical analysis;Japanese Journal of Applied Physics;2021-09-07