Persistent photoconductivity in a two-dimensional electron gas system formed by an AlGaN/GaN heterostructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365893
Reference20 articles.
1. Emerging gallium nitride based devices
2. InGaN multi‐quantum‐well structure laser diodes grown on MgAl2O4 substrates
3. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
4. Photoluminescence characterization of the quantum well structure and influence of optical illumination on the electrical performance of AlGaN/GaN modulation‐doped field‐effect transistors
5. Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
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