SiC and GaN devices – wide bandgap is not all the same-Reference-Cited by-同舟云学术

SiC and GaN devices – wide bandgap is not all the same

Published:2014-05 Issue:3 Volume:8 Page:227-236
ISSN:1751-858X
Container-title:IET Circuits, Devices & Systems
language:en
Short-container-title:IET Circuits, Devices & Systems

Author:

Kaminski Nando¹,Hilt Oliver²

Affiliation:

1. IALBInstitute for Electrical Drives, Power Electronics, and DevicesUniversity of BremenOtto‐Hahn‐Allee NW128359BremenGermany

2. GaN‐Electronics, Department of Power ElectronicsFerdinand Braun InstitutLeibniz‐Institut für HöchstfrequenztechnikGustav‐Kirchhoff‐Straße 412489BerlinGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering,Control and Systems Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-cds.2013.0223

Reference68 articles.

1. Advanced SiC and GaN power electronics for automotive systems

2. Nearly Ideal Current–Voltage Characteristics of Schottky Barrier Diodes Formed on Hydride-Vapor-Phase-Epitaxy-Grown GaN Free-Standing Substrates

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