GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, CA, USA
Funder
Semiconductor Research Corporation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10001839/09954376.pdf?arnumber=9954376
Reference26 articles.
1. Fabrication of p-channel heterostructure field effect transistors with polarization-induced two-dimensional hole gases at metal–polar GaN/AlInGaN interfaces;reuters;J Phys D Appl Phys,2014
2. p-Channel Enhancement and Depletion Mode GaN-Based HFETs With Quaternary Backbarriers
3. High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering
4. P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas
5. High ${I}_{\text{ON}}$ and ${I}_{\text{ON}}$ /${I}_{\text{OFF}}$ Ratio Enhancement-Mode Buried ${p}$ -Channel GaN MOSFETs on ${p}$ -GaN Gate Power HEMT Platform
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1. A Normally-Off Tungsten-Gated p-AlGaN/u-GaN Composite-Channel p-MESFET With Negligible Hysteresis and a High I ON/I OFF Ratio;IEEE Transactions on Electron Devices;2024-07
2. An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET with high ION/IOFF ratio and steep subthreshold swing;Applied Physics Letters;2024-04-15
3. A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits;Electronics;2024-02-10
4. Continuous Growth of Crystalline InGaZnO on InLaO by Spray Pyrolysis for High‐Performance Thin‐Film Transistors with Excellent Stability;Advanced Materials Technologies;2024-02-10
5. Interface state analysis of Schottky-gated p-AlGaN/u-GaN/AlGaN p-FET with negligible hysteresis at high temperatures;Applied Physics Letters;2023-09-25
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