High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering-Reference-Cited by-同舟云学术

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High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

Published:2016-08-01 Issue:8 Volume:4 Page:086103
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Mater.

Author:

Arakawa Yasuaki¹,Ueno Kohei¹,Kobayashi Atsushi¹,Ohta Jitsuo¹²,Fujioka Hiroshi¹³

Affiliation:

1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, Japan

2. PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan

3. ACCEL, Japan Science and Technology Agency (JST), 5 Sanbancho, Chiyoda-ku, Tokyo 102-0075, Japan

Funder

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Reference24 articles.

1. Extremely Low On-Resistance and High Breakdown Voltage Observed in Vertical GaN Schottky Barrier Diodes with High-Mobility Drift Layers on Low-Dislocation-Density GaN Substrates

2. High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

3. Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

4. Vertical Power p-n Diodes Based on Bulk GaN

5. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation

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1. Polarization-Doped InGaN LEDs and Laser Diodes for Broad Temperature Range Operation;Materials;2024-09-13

2. Hole Conduction Mechanism in In–Mg‐Codoped GaN Prepared via Pulsed Sputtering Deposition;physica status solidi (a);2024-03-12

3. Band-like transport in solution-processed perylene diimide dianion films with high Hall mobility;National Science Review;2024-03-08

4. High growth rate magnetron sputter epitaxy of GaN using a solid Ga target;Vacuum;2024-02

5. HiPIMS-grown AlN buffer for threading dislocation reduction in DC-magnetron sputtered GaN epifilm on sapphire substrate;Vacuum;2023-11

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