BV > 3 kV/V<sub>TH</sub> = 3.5 V Normally-Off Al<sub>0.6</sub>Ga<sub>0.4</sub>N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric-Reference-Cited by-同舟云学术

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BV > 3 kV/V_TH = 3.5 V Normally-Off Al_0.6Ga_0.4N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric

Published:2022-12 Issue:12 Volume:43 Page:2141-2144
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Wang Jieying¹^ORCID,Zhou Hong¹^ORCID,Alghamdi Sami²^ORCID,Zhang Jincheng¹^ORCID,Zheng Xuefeng¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an, China

2. Electrical and Computer Engineering Department, Faculty of Engineering, King Abdulaziz University, Jeddah, Saudi Arabia

Funder

Key Project of Science and Technology of Guangdong Province

Deanship of Scientific Research (DSR), King Abdulaziz University, Jeddah, Saudi Arabia

National Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9965979/09927428.pdf?arnumber=9927428

Reference28 articles.

1. Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation

2. High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm

3. Remarkable Breakdown Voltage on AlN/AlGaN/AlN double heterostructure

4. High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V

5. Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Trapping/Detrapping Kinetic Modeling Under Positive/Negative Gate Stress Including Inhibition Dynamics in 4H-SiC MOS Capacitors;IEEE Transactions on Electron Devices;2024-01

2. Al_0.64Ga_0.36N channel MOSHFET on single crystal bulk AlN substrate;Applied Physics Express;2023-06-01

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