Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://ieeexplore.ieee.org/ielam/16/9520090/9487020-aam.pdf
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. High-Temperature Electronics Using $\beta{-}$ Ga203 FETs and AIGaN/GaN HEMTs;NAECON 2023 - IEEE National Aerospace and Electronics Conference;2023-08-28
2. Enhancement-Mode GaN Transistor Technology for Harsh Environment Operation;IEEE Electron Device Letters;2023-07
3. 500 °C operation of β-Ga2O3 field-effect transistors;Applied Physics Letters;2022-12-12
4. BV > 3 kV/VTH = 3.5 V Normally-Off Al0.6Ga0.4N MOSFET With Recessed-Gate and Ferroelectric Gate Dielectric;IEEE Electron Device Letters;2022-12
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