High-Temperature Electronics Using $\beta{-}$ Ga203 FETs and AIGaN/GaN HEMTs
Author:
Affiliation:
1. Air Force Research Laboratory,OH,USA
2. Leibniz-Institut fur Kristallzuchtung,Berlin,Germany
3. KBR, Inc.,Beavercreek,OH,USA
4. University of Illinois, University of Illinois,IL,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10365712/10365727/10365790.pdf?arnumber=10365790
Reference12 articles.
1. A review of high-temperature electronics technology and applications
2. High-temperature electronics - a role for wide bandgap semiconductors?
3. Operational Testing of 4H-SiC JFET ICs for 60 Days Directly Exposed to Venus Surface Atmospheric Conditions
4. Al0.7Ga0.3N MESFET With All-Refractory Metal Process for High Temperature Operation
5. InAlN/GaN HEMT on Si With fmax = 270 GHz
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1. Temperature-induced degradation of GaN HEMT: An in situ heating study;Journal of Vacuum Science & Technology B;2024-04-26
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