Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment
Author:
Affiliation:
1. Sandia National Laboratories, Albuquerque, New Mexico 87123 USA
Funder
Sandia National Laboratories
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5064543
Reference26 articles.
1. AlN metal–semiconductor field-effect transistors using Si-ion implantation
2. AlGaN Channel HEMT With Extremely High Breakdown Voltage
3. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
4. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate
5. An AlN/Al0.85Ga0.15N high electron mobility transistor
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