AlN metal–semiconductor field-effect transistors using Si-ion implantation
Author:
Funder
Japan Society for the Promotion of Science
Office of Naval Research
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/57/i=4S/a=04FR11/pdf
Reference36 articles.
1. The intrinsic thermal conductivity of AIN
2. Nitride Semiconductor Devices
3. Impact of high-temperature growth by metal-organic vapor phase epitaxy on microstructure of AlN on 6H-SiC substrates
4. High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures
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