High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures-Reference-Cited by-同舟云学术

High-quality AlN layers grown by hot-wall MOCVD at reduced temperatures

Published:2012-01 Issue:1 Volume:338 Page:52-56
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kakanakova-Georgieva A.,Nilsson D.,Janzén E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. M. Dauelsberg, E.J. Thrush, B. Schineller, J. Kaeppeler, in: M. Razeghi, M. Henini (Eds.), Optoelectronic Devices: III-Nitrides, Elsevier Ltd., ISBN: 0-08-044426-1, 2004 (Chapter 4).

2. H.X. Jiang, J.Y. Lin, in: M. Razeghi, M. Henini (Eds.), Optoelectronic Devices: III-Nitrides, Elsevier Ltd., ISBN: 0-08-044426-1, 2004 (Chapter 7).

3. AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

4. Performance of III‐nitride epitaxy in a low V‐to‐III gas‐flow ratio range under nitrogen ambient in a hot‐wall MOCVD system

5. Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

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